Quasiballistic quantum transport through Ge/Si core/shell nanowires

We study signatures of ballistic quantum transport of holes through Ge/Si core/shell nanowires at low temperatures. We observe Fabry-Pérot interference patterns as well as conductance plateaus at integer multiples of 2e2/h at zero magnetic field. Magnetic field evolution of these plateaus reveals re...

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Bibliographic Details
Published inNanotechnology Vol. 28; no. 38; p. 385204
Main Authors Kotekar-Patil, D, Nguyen, B-M, Yoo, J, Dayeh, S A, Frolov, S M
Format Journal Article
LanguageEnglish
Published England IOP Publishing 20.09.2017
Subjects
1D nanowires
ballistic transport
conductance quantization
ENGINEERING
Fabry-Perot interference
factor
Lande
Material Science
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Summary:We study signatures of ballistic quantum transport of holes through Ge/Si core/shell nanowires at low temperatures. We observe Fabry-Pérot interference patterns as well as conductance plateaus at integer multiples of 2e2/h at zero magnetic field. Magnetic field evolution of these plateaus reveals relatively large effective Landé g-factors. Ballistic effects are observed in nanowires with silicon shell thickness of 1-3 nm, but not in bare germanium wires. These findings inform the future development of spin and topological quantum devices which rely on ballistic sub-band-resolved transport.
Bibliography:NANO-114394.R2
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USDOE Office of Science (SC). Basic Energy Sciences (BES) (SC-22)
AC52-06NA25396
LA-UR-17-26870
ISSN:0957-4484
1361-6528
DOI:10.1088/1361-6528/aa7f82