Low-resistance submicrometer contacts to silicon

The fabrication of submicrometer contacts of Al, PtSi, TiN, and CVD W to both arsenic- and boron-doped junctions using e-beam lithography and photolithography in a mix-and-match mode is described. The contact resistances obtained indicate that this will not be a major barrier for future ULSI scaling...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 35; no. 8; pp. 1328 - 1333
Main Authors Wright, P.J., Loh, W.M., Saraswat, K.C.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.08.1988
Institute of Electrical and Electronics Engineers
Subjects
Annealing
Applied sciences
Boron
Electrical resistance measurement
Electromigration
Electronics
Exact sciences and technology
Implants
Interfaces
Lithography
Resists
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Tin
Ultra large scale integration
Titanium Nitrides
Tungsten
Platinum Silicides
Contact resistance
Aluminium
Electric contact
Experimental study
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Summary:The fabrication of submicrometer contacts of Al, PtSi, TiN, and CVD W to both arsenic- and boron-doped junctions using e-beam lithography and photolithography in a mix-and-match mode is described. The contact resistances obtained indicate that this will not be a major barrier for future ULSI scaling. The measured resistance values are compared to those obtained using a 2-D model and the discrepancies are discussed. A generalized scaling law for electromigration at contacts is also developed by taking into account the current distribution in the contact area.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.2555