Breakdown voltage mapping through voltage dependent ReBEL intensity imaging of multi-crystalline Si solar cells

Device material quality affects both the efficiency and the longevity of photovoltaic (PV) cells. Therefore, identifying these defects can be beneficial in the development of more efficient and longer lasting PV cells. In this study, a combination of spatially-resolved, electroluminescence (EL), and...

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Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 535; pp. 63 - 66
Main Authors Dix-Peek, RM, van Dyk, EE, Vorster, FJ, Pretorius, CJ
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 15.04.2018
Elsevier BV
Subjects
Breakdown
Crystal defects
Crystal structure
Crystallinity
Crystals
Electric currents
Electric potential
Electroluminescence
Junction breakdown
LBIC
Light beams
Luminescence
Mapping
Photovoltaic cells
PV cell
Solar cells
PV cell
LBIC
EL
Junction breakdown
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Summary:Device material quality affects both the efficiency and the longevity of photovoltaic (PV) cells. Therefore, identifying these defects can be beneficial in the development of more efficient and longer lasting PV cells. In this study, a combination of spatially-resolved, electroluminescence (EL), and light beam induced current (LBIC) measurements, were used to identify specific defects and features of a multi-crystalline Si PV cells. In this study, a novel approach is used to map the breakdown voltage of a PV cell through voltage dependent Reverse Bias EL (ReBEL) intensity imaging.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2017.06.041