GaInNAs/GaAs Quantum Well Growth by Chemical Beam Epitaxy

This is the first report on chemical beam epitaxy (CBE) of GaInNAs/GaAs quantum wells (QWs). From the observed clear X-ray diffraction satellite peaks, the QW structure incorporating nitrogen supplied by radical nitrogen was successfully grown. The photoluminescence emission with the emission peak w...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 37; no. 1R; p. 90
Main Authors Miyamoto, Tomoyuki, Takeuchi, Kanji, Kageyama, Takeo, Koyama, Fumio, Iga, Kenichi
Format Journal Article
LanguageEnglish
Published 01.01.1998
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Summary:This is the first report on chemical beam epitaxy (CBE) of GaInNAs/GaAs quantum wells (QWs). From the observed clear X-ray diffraction satellite peaks, the QW structure incorporating nitrogen supplied by radical nitrogen was successfully grown. The photoluminescence emission with the emission peak wavelength of 1.0 µm was observed from GaInNAs/GaAs QWs at room temperature. The wavelength could be elongated by increasing the amount of nitrogen and indium.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.37.90