Near-Field and Far-Field Analyses of Alternating Impedance Electromagnetic Bandgap (AI-EBG) Structure for Mixed-Signal Applications

This paper presents near-field (NF) and far-field (FF) analysis of alternating impedance electromagnetic bandgap (AI-EBG) structure in packages and boards. Three test vehicles have been designed and fabricated for NF and FF measurements. Simulation results using a full-wave solver (SONNET) have been...

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Bibliographic Details
Published inIEEE transactions on advanced packaging Vol. 30; no. 2; pp. 180 - 190
Main Authors Jinwoo Choi, Dong Gun Kam, Daehyun Chung, Srinivasan, K., Govind, V., Joungho Kim, Swaminathan, M.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.05.2007
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Summary:This paper presents near-field (NF) and far-field (FF) analysis of alternating impedance electromagnetic bandgap (AI-EBG) structure in packages and boards. Three test vehicles have been designed and fabricated for NF and FF measurements. Simulation results using a full-wave solver (SONNET) have been compared with measurement results. This paper investigates the radiation due to return current on different reference planes. The analysis results from simulations and measurements provide important guidelines for design of the AI-EBG structure based power distribution network for noise isolation and suppression in mixed-signal systems
Bibliography:ObjectType-Article-2
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ISSN:1521-3323
1557-9980
DOI:10.1109/TADVP.2007.896921