Near-Field and Far-Field Analyses of Alternating Impedance Electromagnetic Bandgap (AI-EBG) Structure for Mixed-Signal Applications
This paper presents near-field (NF) and far-field (FF) analysis of alternating impedance electromagnetic bandgap (AI-EBG) structure in packages and boards. Three test vehicles have been designed and fabricated for NF and FF measurements. Simulation results using a full-wave solver (SONNET) have been...
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Published in | IEEE transactions on advanced packaging Vol. 30; no. 2; pp. 180 - 190 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.05.2007
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | This paper presents near-field (NF) and far-field (FF) analysis of alternating impedance electromagnetic bandgap (AI-EBG) structure in packages and boards. Three test vehicles have been designed and fabricated for NF and FF measurements. Simulation results using a full-wave solver (SONNET) have been compared with measurement results. This paper investigates the radiation due to return current on different reference planes. The analysis results from simulations and measurements provide important guidelines for design of the AI-EBG structure based power distribution network for noise isolation and suppression in mixed-signal systems |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1521-3323 1557-9980 |
DOI: | 10.1109/TADVP.2007.896921 |