p-type conductivity in GaN:Zn monocrystals grown by ammonothermal method

Zinc is often regarded as an alternative to magnesium p-type dopants in gallium nitride. However, besides many theoretical predictions, at present, there are poor data on experimentally revealed p-type conductivity and evaluation of Zn activation energy by means of electrical transport measurements....

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Bibliographic Details
Published inJournal of applied physics Vol. 129; no. 13
Main Authors Zajac, M., Konczewicz, L., Litwin-Staszewska, E., Iwinska, M., Kucharski, R., Juillaguet, S., Contreras, S.
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 07.04.2021
Subjects
Applied physics
Condensed Matter
Conduction bands
Crystallization
Gallium nitrides
Magnesium
Materials Science
Physics
Room temperature
Single crystals
Zinc
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Summary:Zinc is often regarded as an alternative to magnesium p-type dopants in gallium nitride. However, besides many theoretical predictions, at present, there are poor data on experimentally revealed p-type conductivity and evaluation of Zn activation energy by means of electrical transport measurements. In this paper, ammonothermal crystallization of bulk GaN:Zn monocrystals is reported. Despite a high doping level of Zn (up to 2 × 1020 cm−3), p-type conductivity with hole concentration as low as of 4 × 1015 cm−3 at room temperature and mobility about 3 cm2/V s was observed. A deep nature of the Zn acceptor was proved, as the ionization energy can exceed 260 meV. In addition, conduction in the impurity band appeared at temperatures as high as room temperature.
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0038524