Ultraviolet emission from low resistance Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires

SnO2 and Sn:In2O3 nanowires were grown on Si(001), and p-n junctions were fabricated in contact with p-type Cu2S which exhibited rectifying current–voltage characteristics. Core-shell Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires were obtained by depositing copper and post-growth processing under H2S b...

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Bibliographic Details
Published inAPL materials Vol. 2; no. 11; pp. 116107 - 116107-7
Main Authors Karageorgou, E., Zervos, M., Othonos, A.
Format Journal Article
LanguageEnglish
Published AIP Publishing LLC 01.11.2014
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Summary:SnO2 and Sn:In2O3 nanowires were grown on Si(001), and p-n junctions were fabricated in contact with p-type Cu2S which exhibited rectifying current–voltage characteristics. Core-shell Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires were obtained by depositing copper and post-growth processing under H2S between 100 and 500 °C. These consist mainly of tetragonal rutile SnO2 and cubic bixbyite In2O3. We observe photoluminescence at 3.65 eV corresponding to band edge emission from SnO2 quantum dots in the Cu2SnS3/SnO2 nanowires due to electrostatic confinement. The Cu2SnS3/SnO2 nanowires assemblies had resistances of 100 Ω similar to CuInS2/In2O3 nanowires which exhibited photoluminescence at 3.0 eV.
ISSN:2166-532X
2166-532X
DOI:10.1063/1.4901295