On the Role of the N-N ^ Junction Doping Profile of a PIN Diode on Its Turn-Off Transient Behavior

• Published in: IEEE transactions on power electronics Vol. 23; no. 1; pp. 491 - 494
• Main Authors: Allard, B., Garrab, H., ben Salah, T., Morel, H., Ammous, K., Besbes, K.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.01.2008; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Circuit simulation; Compound structure devices; Diodes; Doping profiles; Electric power; Electromagnetic compatibility; Electromagnetic transients; Electronics; Engineering Sciences; Epitaxial growth; Exact sciences and technology; Extremities; PiN diode; Semiconductor diodes; Semiconductor doping; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductor process modeling; Switching circuits; Validity; Voltage; PiN diode; Design criterion; Switching conditions; Epitaxy; System simulation; n n+ junction; p i n diode; Doping profile; Switching; Comparative study
• ISSN: 0885-8993; 1941-0107
• DOI: 10.1109/TPEL.2007.911882

This paper focuses on the role of the N-N junction doping profile model of a PiN diode on its turn-off transient and, particularly, the influence of multiple epitaxies in the N-N profile. A conventional doping profile model has been used in a previous work and an identification procedure for the main design parameters has been demonstrated. However the validity range of identified PiN-diode models appeared quite limited for hard current and voltage conditions. Readers have asked for the effect of a more advanced doping profile. The turn-off transient of an STTB506D device is considered from experimental and simulation point-of-view inside a fully characterized switching cell. A limitation of the conventional doping profile model is demonstrated and explained physically in order to introduce the necessity of a more complex doping profile. An advanced doping profile is then considered and a comparative study between experimental and simulated turn-off transient behavior of the device is established.