Pressure effect of superconducting transition temperature for boron-doped diamond films

• Published in: Physica. C, Superconductivity Vol. 468; no. 15; pp. 1228 - 1230
• Main Authors: Tomioka, F., Tsuda, S., Yamaguchi, T., Kawarada, H., Takano, Y.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 15.09.2008; Elsevier Science
• Subjects: Boron; Chemical vapor deposition; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Diamond; Electrical resistivity; Exact sciences and technology; Lattices; Microwaves; Orientation; Physics; Pressure; Pressure effects; Superconductivity; Thin films; Transition temperature; Transition temperature variations; 74.25.Bt; 74.25.−q; Boron; Diamond; Pressure; Superconductivity; Homoepitaxy; 74.25.-q; Electrical conductivity; Epitaxial layers; Pressure effects; Microwave radiation; Superconducting transitions; Diamonds; Doping; Thin films; Anisotropy; PECVD
• ISSN: 0921-4534; 1873-2143
• DOI: 10.1016/j.physc.2008.05.039

The superconducting transition temperature of homoepitaxial boron-doped diamond thin films fabricated by microwave plasma-assisted chemical vapor deposition technique depend on substrate orientation. In addition, heavily doped diamond thin films indicate anisotropic lattice expansion. From these points of view, pressure effect will give us knowledge of the superconducting mechanism of boron-doped diamond. We report measurements of the electrical resistivity of heavily boron-doped diamond thin film under pressure up to P = 1.45 GPa and 1.27 GPa for (1 1 1) and (1 0 0) homoepitaxial thin films, respectively. The superconducting transition temperature decreases linearly with increasing pressure by a rate of δ T c/δ P = −1.17 × 10 −1 K/GPa and −1.51 × 10 −2 K/GPa for (1 1 1) and (1 0 0) thin film, respectively.