Distorted field scattering in a nanoscale MOSFET in the ballistic transport regime

This investigation studies theoretically transmissions and conducting currents in a nanometre field effect transistor in a distorted electric field. In the ballistic transport regime, the momentum conservation does not apply in the direction perpendicular to the carrier transport owing to the presen...

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Published inJournal of physics. Condensed matter Vol. 19; no. 44; pp. 446208 - 446208 (10)
Main Authors Hung, K-M, Dai, J-H, Wu, K-Y, Tso, W Y, Chen, J-T, Horng, K-Y, Shieh, T-H
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 07.11.2007
Institute of Physics
Subjects
Acoustic wave devices, piezoelectric and piezoresistive devices
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
MOSFET
Charge carrier mobility
Momentum
Nanostructure
Ballistic transport
Electric field effect
Nanotechnology
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Summary:This investigation studies theoretically transmissions and conducting currents in a nanometre field effect transistor in a distorted electric field. In the ballistic transport regime, the momentum conservation does not apply in the direction perpendicular to the carrier transport owing to the presence of a distorted electric field that is caused by the drain and gate biases associated with the fringe effect. This scattering occurs in both long- and short-channel field effect transistors, and is particularly large in nanometre devices that operate in the ballistic transport regime.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/19/44/446208