Growth morphology and properties of metals on graphene

Graphene, a single atomic layer of graphite, has been the focus of recent intensive studies due to its novel electronic and structural properties. With this study, metals grown on graphene also have been of interest because of their potential use as metal contacts in graphene devices, for spintronic...

Full description

Saved in:
Bibliographic Details
Published inProgress in surface science Vol. 90; no. 4; pp. 397 - 443
Main Authors Liu, Xiaojie, Han, Yong, Evans, James W., Engstfeld, Albert K., Behm, R. Juergen, Tringides, Michael C., Hupalo, Myron, Lin, Hai-Qing, Huang, Li, Ho, Kai-Ming, Appy, David, Thiel, Patricia A., Wang, Cai-Zhuang
Format Journal Article
LanguageEnglish
Published United States Elsevier 01.12.2015
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Graphene, a single atomic layer of graphite, has been the focus of recent intensive studies due to its novel electronic and structural properties. With this study, metals grown on graphene also have been of interest because of their potential use as metal contacts in graphene devices, for spintronics applications, and for catalysis. All of these applications require good understanding and control of the metal growth morphology, which in part reflects the strength of the metal–graphene bond. The interaction between graphene and metal is sufficiently strong to modify the electronic structure of graphene is also of great importance. We will discuss recent experimental and computational studies related to deposition of metals on graphene supported on various substrates (SiC, SiO2, and hexagonal close-packed metal surfaces). Of specific interest are the metal–graphene interactions (adsorption energies and diffusion barriers of metal adatoms), and the crystal structures and thermal stability of the metal nanoclusters.
Bibliography:CHE1111500; DMR1504593; 11204013; 2013T60056; AC02-07CH11358
IS-J-8748
USDOE Office of Science (SC), Basic Energy Sciences (BES)
ISSN:0079-6816
1878-4240
DOI:10.1016/j.progsurf.2015.07.001