Design and optimization of a 200 GHz SiGe HBT collector profile by TCAD

A novel simulation assisted investigation was used to obtain the optimum collector design of a 200 GHz silicon–germanium (SiGe) hetero junction bipolar transistor (HBT) for manufacturing. Technology computer aided design (TCAD) tools were applied in a stepwise methodology to explore the large and co...

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Bibliographic Details
Published inApplied surface science Vol. 224; no. 1; pp. 324 - 329
Main Authors Stricker, Andreas D., Johnson, Jeffrey B., Freeman, Greg, Rieh, Jae-Sung
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 15.03.2004
Elsevier Science
Subjects
BJT
Collector doping profile
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Design methodology
Exact sciences and technology
HBT
Hetero bipolar junction transistor
Physics
SiGe
TCAD
SiGe
Design methodology
TCAD
Collector doping profile
HBT
85.30.P
BJT
Hetero bipolar junction transistor
Semiconductor alloys
Bipolar transistors
Inorganic compounds
Ge-Si alloys
Doping profiles
85.30.P SiGe
Optimization
Binary alloys
Simulation
Germanium
Silicon
Computer aided design
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Summary:A novel simulation assisted investigation was used to obtain the optimum collector design of a 200 GHz silicon–germanium (SiGe) hetero junction bipolar transistor (HBT) for manufacturing. Technology computer aided design (TCAD) tools were applied in a stepwise methodology to explore the large and complex design space and to fully understand the tradeoffs between all relevant HBT performance parameters.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2003.08.060