Structural, FTIR and photoluminescence properties of ZnS:Cu thin films by chemical bath deposition method

ZnS:Cu thin films were deposited on glass substrate using chemical bath by neutral pH solution synthesis route. Cu is varied between 0 and 0.1M%. The XRD measurement shows hexagonal structure with the average crystalline size between 1.67 and 2.47nm (below Bohr diameter). Energy dispersive X-ray spe...

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Bibliographic Details
Published inMaterials letters Vol. 93; pp. 223 - 225
Main Authors Muthukumaran, S., Ashok kumar, M.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.02.2013
Subjects
copper
Cu doped ZnS thin films
energy
Fourier transform infrared spectroscopy
FTIR
glass
ions
Microstructure
particle size
Photoluminescence
Structural
X-radiation
X-ray diffraction
Cu doped ZnS thin films
Microstructure
FTIR
Structural
Photoluminescence
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Summary:ZnS:Cu thin films were deposited on glass substrate using chemical bath by neutral pH solution synthesis route. Cu is varied between 0 and 0.1M%. The XRD measurement shows hexagonal structure with the average crystalline size between 1.67 and 2.47nm (below Bohr diameter). Energy dispersive X-ray spectrum reveals the presence of Cu in the ZnS lattice. The increase of lattice parameters, the reduction of particle size and a small shift in XRD peaks by Cu-doping reveals the substitution of Cu2+ ions into the ZnS lattice. The observed red shift of green emission from 506 to 519nm in photoluminescence spectra confirms the presence of Cu2+ ions that are embedded in the ZnS matrix. ► Cu doped ZnS thin films with crystal size below 3nm were successfully synthesised. ► Substitution of Cu2+ into ZnS lattice was confirmed by FTIR and photoluminescence. ► It is a great candidate for the optoelectronic devices.
Bibliography:http://dx.doi.org/10.1016/j.matlet.2012.11.091
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2012.11.091