Characteristics of dynamic resistance in a heavily doped silicon semiconductor resistor

• Published in: International journal of electronics Vol. 86; no. 3; pp. 269 - 279
• Main Authors: KIM, JONGDAE, KIM, SANG GI, KOO, JIN GUN, ROH, TAE MOON, PARK, HOON SOO, KIM, DAE YONG
• Format: Journal Article
• Language: English
• Published: London Taylor & Francis Group 01.03.1999; Taylor & Francis
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Miscellaneous; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Temperature coefficient; Dynamic characteristic; Electrical conductivity; Semiconductor materials; Electrical mobility; Electron mobility; Temperature resistance curve; Resistor; Dynamic resistance; Room temperature; Electron carrier; Joule effect
• ISSN: 0020-7217; 1362-3060
• DOI: 10.1080/002072199133409

The dynamic resistance of a heavily doped semiconductor resistor was evaluated by observing the electrical mobility and conductivity of the resistor as a function of temperature. It is known for the first time that the silicon resistor presents a PTCR (positive temperature coefficient of resistance) below its intrinsic temperature and an NTCR (negative temperature coefficient of resistance) above the intrinsic temperature but below the melting temperature, and again a PTCR beyond the melting temperature, when molten silicon becomes metallic. The special features of the resistor appear to be that the resistance increases due to joule heating, decreases due to negative resistance behaviour, and then the resistor is melted and vaporized to generate plasma.