InP and Sn:InP based quantum dot sensitized solar cells

Due to the ideal band gap and environmental friendliness, InP is a promising light-harvesting material in photovoltaic cells. However, “green” InP based quantum dot sensitized solar cells (QDSSCs) have been rarely reported. Herein, nearly monodispersed Sn doped InP (Sn:InP) quantum dots (QDs) were s...

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Published inJournal of materials chemistry. A, Materials for energy and sustainability Vol. 3; no. 43; pp. 21922 - 21929
Main Authors Yang, Suolong, Zhao, Pengxiang, Zhao, Xiaochong, Qu, Liangti, Lai, Xinchun
Format Journal Article
LanguageEnglish
Published 01.01.2015
Subjects
chemistry
Electrodes
Illumination
Indium phosphides
lighting
Photovoltaic cells
Quantum dots
Self assembly
Solar cells
tin
Titanium dioxide
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Abstract Due to the ideal band gap and environmental friendliness, InP is a promising light-harvesting material in photovoltaic cells. However, “green” InP based quantum dot sensitized solar cells (QDSSCs) have been rarely reported. Herein, nearly monodispersed Sn doped InP (Sn:InP) quantum dots (QDs) were synthesized by the one-pot nucleation doping method, and used as the sensitizer in the construction of QDSSCs. High QD loadings on the TiO 2 film electrodes were achieved by using the capping ligand-induced self-assembly (CLIS) sensitization technique. The resulting champion Sn:InP cell shows a power conversion efficiency (PCE) of 3.54% under AM 1.5G (simulated 1 sun illumination), which is remarkably higher than that of un-doped InP QD based ones. This improvement is ascribed to the regulation role of the band gap by Sn dopant in the InP QDs. The Sn:InP QDSSCs exhibit moderate efficiency, good reproducibility and stability. These new findings may pave the way for the performance improvements of other QD photovoltaic devices.
AbstractList Due to the ideal band gap and environmental friendliness, InP is a promising light-harvesting material in photovoltaic cells. However, “green” InP based quantum dot sensitized solar cells (QDSSCs) have been rarely reported. Herein, nearly monodispersed Sn doped InP (Sn:InP) quantum dots (QDs) were synthesized by the one-pot nucleation doping method, and used as the sensitizer in the construction of QDSSCs. High QD loadings on the TiO 2 film electrodes were achieved by using the capping ligand-induced self-assembly (CLIS) sensitization technique. The resulting champion Sn:InP cell shows a power conversion efficiency (PCE) of 3.54% under AM 1.5G (simulated 1 sun illumination), which is remarkably higher than that of un-doped InP QD based ones. This improvement is ascribed to the regulation role of the band gap by Sn dopant in the InP QDs. The Sn:InP QDSSCs exhibit moderate efficiency, good reproducibility and stability. These new findings may pave the way for the performance improvements of other QD photovoltaic devices.
Due to the ideal band gap and environmental friendliness, InP is a promising light-harvesting material in photovoltaic cells. However, “green” InP based quantum dot sensitized solar cells (QDSSCs) have been rarely reported. Herein, nearly monodispersed Sn doped InP (Sn:InP) quantum dots (QDs) were synthesized by the one-pot nucleation doping method, and used as the sensitizer in the construction of QDSSCs. High QD loadings on the TiO₂ film electrodes were achieved by using the capping ligand-induced self-assembly (CLIS) sensitization technique. The resulting champion Sn:InP cell shows a power conversion efficiency (PCE) of 3.54% under AM 1.5G (simulated 1 sun illumination), which is remarkably higher than that of un-doped InP QD based ones. This improvement is ascribed to the regulation role of the band gap by Sn dopant in the InP QDs. The Sn:InP QDSSCs exhibit moderate efficiency, good reproducibility and stability. These new findings may pave the way for the performance improvements of other QD photovoltaic devices.
Due to the ideal band gap and environmental friendliness, InP is a promising light-harvesting material in photovoltaic cells. However, "green" InP based quantum dot sensitized solar cells (QDSSCs) have been rarely reported. Herein, nearly monodispersed Sn doped InP (Sn:InP) quantum dots (QDs) were synthesized by the one-pot nucleation doping method, and used as the sensitizer in the construction of QDSSCs. High QD loadings on the TiO2 film electrodes were achieved by using the capping ligand-induced self-assembly (CLIS) sensitization technique. The resulting champion Sn:InP cell shows a power conversion efficiency (PCE) of 3.54% under AM 1.5G (simulated 1 sun illumination), which is remarkably higher than that of un-doped InP QD based ones. This improvement is ascribed to the regulation role of the band gap by Sn dopant in the InP QDs. The Sn:InP QDSSCs exhibit moderate efficiency, good reproducibility and stability. These new findings may pave the way for the performance improvements of other QD photovoltaic devices.
Author Lai, Xinchun
Qu, Liangti
Yang, Suolong
Zhao, Xiaochong
Zhao, Pengxiang
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Snippet Due to the ideal band gap and environmental friendliness, InP is a promising light-harvesting material in photovoltaic cells. However, “green” InP based...
Due to the ideal band gap and environmental friendliness, InP is a promising light-harvesting material in photovoltaic cells. However, "green" InP based...
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SubjectTerms chemistry
Electrodes
Illumination
Indium phosphides
lighting
Photovoltaic cells
Quantum dots
Self assembly
Solar cells
tin
Titanium dioxide
Title InP and Sn:InP based quantum dot sensitized solar cells
URI https://www.proquest.com/docview/1827925267
https://www.proquest.com/docview/1835620339
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