InP and Sn:InP based quantum dot sensitized solar cells

• Published in: Journal of materials chemistry. A, Materials for energy and sustainability Vol. 3; no. 43; pp. 21922 - 21929
• Main Authors: Yang, Suolong, Zhao, Pengxiang, Zhao, Xiaochong, Qu, Liangti, Lai, Xinchun
• Format: Journal Article
• Language: English
• Published: 01.01.2015
• Subjects: chemistry; Electrodes; Illumination; Indium phosphides; lighting; Photovoltaic cells; Quantum dots; Self assembly; Solar cells; tin; Titanium dioxide
• ISSN: 2050-7488; 2050-7496; 2050-7496
• DOI: 10.1039/C5TA04925C

Due to the ideal band gap and environmental friendliness, InP is a promising light-harvesting material in photovoltaic cells. However, “green” InP based quantum dot sensitized solar cells (QDSSCs) have been rarely reported. Herein, nearly monodispersed Sn doped InP (Sn:InP) quantum dots (QDs) were synthesized by the one-pot nucleation doping method, and used as the sensitizer in the construction of QDSSCs. High QD loadings on the TiO 2 film electrodes were achieved by using the capping ligand-induced self-assembly (CLIS) sensitization technique. The resulting champion Sn:InP cell shows a power conversion efficiency (PCE) of 3.54% under AM 1.5G (simulated 1 sun illumination), which is remarkably higher than that of un-doped InP QD based ones. This improvement is ascribed to the regulation role of the band gap by Sn dopant in the InP QDs. The Sn:InP QDSSCs exhibit moderate efficiency, good reproducibility and stability. These new findings may pave the way for the performance improvements of other QD photovoltaic devices.