Modified T-Model With an Improved Parameter Extraction Method for Silicon-Based Spiral Inductors

A modified T-equivalent circuit with an improved parameter extraction method is proposed in this letter for silicon-based spiral inductors. Two extra R-L series networks are introduced into the conventional frequency independent T-model to modify its failure in describing the inductance drop-down in...

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Bibliographic Details
Published inIEEE microwave and wireless components letters Vol. 24; no. 11; pp. 817 - 819
Main Authors Yang, Geliang, Wang, Zhigong, Wang, Keping
Format Journal Article
LanguageEnglish
Published IEEE 01.11.2014
Subjects
Circuits
CMOS process
Equivalent circuits
Extraction
Inductance
Inductors
Integrated circuit modeling
Mathematical models
Microwaves
Modeling
Parameter extraction
parameter extraction CMOS
peak- Q
Physical properties
spiral inductor
Spirals
Substrates
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Summary:A modified T-equivalent circuit with an improved parameter extraction method is proposed in this letter for silicon-based spiral inductors. Two extra R-L series networks are introduced into the conventional frequency independent T-model to modify its failure in describing the inductance drop-down in the low frequency band. Besides, a "peak- Q" method is proposed in order to improve the accuracy of the parameter extraction method. Finally, the physical properties underling the critical model parameters of Rp and Cox, which have ever been described qualitatively, are now demonstrated experimentally.
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content type line 23
ISSN:1531-1309
1558-1764
DOI:10.1109/LMWC.2014.2303152