Chemical mechanical polishing of patterned copper wafer surface using water-soluble fullerenol slurry

Cu-CMP has become a key fabrication process by which high-performance semiconductor devices are realized. Therefore, a novel Cu-CMP technique using water-soluble fullerenol slurry was developed. The experimental results show that the proposed Cu-CMP technique realizes a high material removal rate an...

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Bibliographic Details
Published inCIRP annals Vol. 60; no. 1; pp. 567 - 570
Main Authors Takaya, Y., Kishida, H., Hayashi, T., Michihata, M., Kokubo, K.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Kidlington Elsevier Ltd 2011
Elsevier
Subjects
Applied sciences
Exact sciences and technology
Fulleren
Mechanical engineering. Machine design
Polishing
Precision engineering, watch making
Surface
Polishing
Fulleren
Surface
High performance
Scanning electron microscopy
Mechanical polishing
Machining
Chemical polishing
X ray spectrometry
Brittle material
Particle suspension
Cutting speed
Experimental study
Surface treatment
Semiconductor device
Planarization
Chemical reaction
Surface water
Aqueous solution
Copper
Slurries
Production process
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Summary:Cu-CMP has become a key fabrication process by which high-performance semiconductor devices are realized. Therefore, a novel Cu-CMP technique using water-soluble fullerenol slurry was developed. The experimental results show that the proposed Cu-CMP technique realizes a high material removal rate and low dishing performance for the polishing of a patterned Cu-wafer. An XPS analysis and SEM observation showed that these advantageous polishing performances were achieved by the chemical effect of using fullerenol as a polishing agent. The fullerenol was found to chemically react with the copper to form a complex brittle layer which was fragile enough to be removed by rubbing with a polishing pad.
ISSN:0007-8506
DOI:10.1016/j.cirp.2011.03.068