Influence of polarized bias and porous silicon morphology on the electrical behavior of Au-porous silicon contacts

• Published in: Journal of Zhejiang University. B. Science Vol. 6; no. 11; pp. 1135 - 1140
• Main Author: 赵岳 李东升 邢守祥 杨德仁 蒋民华
• Format: Journal Article
• Language: English
• Published: China Springer Nature B.V 01.11.2005; State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China%Clean Energy and Environment Engineering Key Laboratory of Ministry of Education, Zhejiang University, Hangzhou 310027, China%State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China; State Key Lab of Crystal Materials, Shandong University, Jinan 250100, China; Zhejiang University Press
• Subjects: Bias; Electric contacts; Electrical properties; Electrochemistry - instrumentation; Electrochemistry - methods; Electrodes; Electromagnetic Fields; Environment and Materials Engineering; Gold - chemistry; Materials Testing; Molecular Conformation; Morphology; Porosity; Porous silicon; Silicon; Silicon - chemistry; Surface Properties; 传导率; 多孔渗水硅; 电性质; 表面形态学; Electrical properties; Porous silicon; Morphology
• ISSN: 1673-1581; 1862-1783
• DOI: 10.1631/jzus.2005.B1135

This paper reports the surface morphology and I-V curves of porous silicon （PS） samples and related devices. The observed fabrics on the PS surface were found to affect the electrical property of PS devices. When the devices were operated under different external bias （10 V or 3 V） for 10 min, their observed obvious differences in electrical properties may be due to the different control mechanisms in the A1/PS interface and PS matrix morphology.