Third-harmonic UV generation in silicon nitride nanostructures

We report on strong UV third-harmonic generation from silicon nitride films and resonant waveguide gratings. We determine the absolute value of third-order susceptibility of silicon nitride at wavelength of 1064 nm to be χ(³) (-3ω,ω,ω,ω) = (2.8 ± 0.6) × 10⁻²⁰m²/V², which is two orders of magnitude l...

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Bibliographic Details
Published inOptics express Vol. 21; no. 2; p. 2012
Main Authors Ning, Tingyin, Hyvärinen, Outi, Pietarinen, Henna, Kaplas, Tommi, Kauranen, Martti, Genty, Göery
Format Journal Article
LanguageEnglish
Published United States 28.01.2013
Subjects
Equipment Design
Equipment Failure Analysis
Lighting - instrumentation
Materials Testing
Nanostructures - chemistry
Nanostructures - radiation effects
Silicon Compounds - chemistry
Silicon Compounds - radiation effects
Ultraviolet Rays
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Summary:We report on strong UV third-harmonic generation from silicon nitride films and resonant waveguide gratings. We determine the absolute value of third-order susceptibility of silicon nitride at wavelength of 1064 nm to be χ(³) (-3ω,ω,ω,ω) = (2.8 ± 0.6) × 10⁻²⁰m²/V², which is two orders of magnitude larger than that of fused silica. The third-harmonic generation is further enhanced by a factor of 2000 by fabricating a resonant waveguide grating onto a silicon nitride film. Our results extend the operating range of CMOS-compatible nonlinear materials to the UV spectral regime.
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ISSN:1094-4087
1094-4087
DOI:10.1364/OE.21.002012