Preparation of silicon carbide platelets

A method of preparing α-SiC platelets from β-SiC powder is reported. It is found that the annealing temperature, annealing time and additives could influence the quality (aspect ratio, particle size and crystallographic phase composition) of the SiC platelets produced. The influence of stacking faul...

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Bibliographic Details
Published inMaterials letters Vol. 16; no. 2; pp. 84 - 88
Main Authors You, Zhou, Dongliang, Jiang, Shouhong, Tan, Jingkun, Guo
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.03.1993
Elsevier
Subjects
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Methods of crystal growth; physics of crystal growth
Physics
Scanning electron microscopy
Heat treatment
Carbothermy
Impurity
Polytypism
Crystals
Operating mode
Stacking fault
Experimental study
X ray diffraction
Inorganic compound
Alpha form
Silicon Carbides
Preparation
Space group
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Summary:A method of preparing α-SiC platelets from β-SiC powder is reported. It is found that the annealing temperature, annealing time and additives could influence the quality (aspect ratio, particle size and crystallographic phase composition) of the SiC platelets produced. The influence of stacking faults of the starting material on the morphology of resulting crystals has also been investigated.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0167-577X
1873-4979
DOI:10.1016/0167-577X(93)90029-W