Saturation of the free carrier absorption in ZnTe crystals

This study systematically investigates the influence of free carriers on the generation of THz in ZnTe crystals, over a wide range of pumping fluences. As the pumping fluence is increased (< 6.36 mJ/cm(2)), the concentration of free carriers gradually increases and the THz output power is saturat...

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Bibliographic Details
Published inOptics express Vol. 21; no. 12; p. 13930
Main Authors Ku, S. A., Tu, C. M., Chu, W.-C., Luo, C. W., Wu, K. H., Yabushita, A., Chi, C. C., Kobayashi, T.
Format Journal Article
LanguageEnglish
Published United States 17.06.2013
Subjects
Crystallization
Electron Transport
Materials Testing
Scattering, Radiation
Tellurium - chemistry
Tellurium - radiation effects
Terahertz Radiation
Zinc - chemistry
Zinc - radiation effects
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Summary:This study systematically investigates the influence of free carriers on the generation of THz in ZnTe crystals, over a wide range of pumping fluences. As the pumping fluence is increased (< 6.36 mJ/cm(2)), the concentration of free carriers gradually increases and the THz output power is saturated, as clearly demonstrated by the time delay in the THz temporal waveforms, the changes in the THz spectral weight and the red-shift in the PL spectra. For high pumping fluences (> 6.36 mJ/cm(2)), spectacularly, there is a significant quadratic increase in the THz output power when the pumping fluence is increased, as well as at low pumping fluences of < 0.58 mJ/cm(2), because of the saturation of free carriers.
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ISSN:1094-4087
1094-4087
DOI:10.1364/OE.21.013930