Production Technology for High-Yield, High-Performance GaAs Monolithic Amplifiers

A production technology for GaAs MMIC's has been developed. In a six-month period, seventy 2-in wafers have been processed for X-band monolithic power and low-noise amplifiers and more than 2000 working chips have been produced. The two-stage power amplifiers have achieved a typical performance...

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Bibliographic Details
Published inIEEE transactions on microwave theory and techniques Vol. 33; no. 12; pp. 1597 - 1602
Main Authors Shing-Kuo Wang, Ching-Der Chang, Siracusa, M., Liu, L.C.T., Pauley, R.G., Asher, P., Sokolich, M.
Format Journal Article
LanguageEnglish
Published IEEE 01.12.1985
Subjects
Capacitors
Circuit synthesis
Gallium arsenide
Low-noise amplifiers
Microwave devices
Microwave FETs
Millimeter wave integrated circuits
Power amplifiers
Power generation
Production
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Summary:A production technology for GaAs MMIC's has been developed. In a six-month period, seventy 2-in wafers have been processed for X-band monolithic power and low-noise amplifiers and more than 2000 working chips have been produced. The two-stage power amplifiers have achieved a typical performance of 1.6-w output power with 8-dB associated gain and 20-percent power-added efficiency at 9.5 GHz. The two-stage low-noise amplifiers have consistently achieved 3-dB noise figure with 20-dB associated gain at the same frequency. Improvement of MMIC processing technology implemented in this work has resulted in an average dc chip yield of 15 percent.
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ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1985.1133263