Semiconducting YBaCuO films grown on silicon substrates: IR room temperature sensing and fast pyroelectric response

• Published in: IOP conference series. Materials Science and Engineering Vol. 41; no. 1; pp. 12011 - 4
• Main Authors: Kreisler, A J, Jagtap, V S, Sou, G, Klisnick, G, Dégardin, A F
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 01.01.2012
• Subjects: Amorphous materials; AMORPHOUS STRUCTURE; Bolometers; COPPER OXIDE; Detection; Direct current; Electromagnetism; ELECTRONIC PRODUCTS; Electronics; Engineering Sciences; Infrared radiation; INFRARED RAYS; Oxygen content; Planar structures; Radiation detectors; Room temperature; SEMICONDUCTORS; Silicon substrates; SUPERCONDUCTORS; YBCO superconductors; YTTRIUM OXIDE
• ISSN: 1757-8981; 1757-899X
• DOI: 10.1088/1757-899X/41/1/012011

YBa2Cu3O6+x (YBCO) oxides, well known as superconductors for x > 0. 5, are semiconductors (SC) for lower oxygen content. SC films DC sputtered at 150 °C in amorphous form (a-YBCO) exhibited a temperature coefficient of resistance competitive with other bolometric sensing materials. Such deposition conditions are highly beneficial to integrate a radiation detector on a silicon chip bearing already processed readout electronics. IR detector structures have been processed: simple planar or more advanced metal/a-YBCO/metal trilayers. IR response was investigated at 850 nm as a function of the modulation frequency. The planar structure exhibited a regular bolometric response below 100 Hz, then a pyroelectric high-pass response up to 100 kHz. The trilayer device only exhibited the pyroelectric behavior up to 100 kHz . In the pyroelectric regime, detectivity values peaked above 2×108 cm Hz½/W with time constants in the μs range, under both DC biased and unbiased conditions.