High-Performance InP-Based Photodetector in an Amplifier Layer Stack on Semi-Insulating Substrate

• Published in: IEEE photonics technology letters Vol. 20; no. 23; pp. 1941 - 1943
• Main Authors: Ling Xu, Nikoufard, M., Leijtens, X., de Vries, T., Smalbrugge, E., Notzel, R., Yok Siang Oei, Smit, M.K.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.12.2008; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Amplifiers; Detectors; Electric potential; Etching; High speed optical techniques; Indium phosphide; Indium phosphides; Optical amplifiers; Optical devices; Optical waveguides; Passive components; Photodetector (PD); Photodetectors; semi-insulating (SI); semiconductor optical amplifier (SOA); Semiconductor optical amplifiers; Stacks; Stimulated emission; Waveguide lasers; Waveguides
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/LPT.2008.2005425

A waveguide photodetector (PD) based on semi-insulating (SI) indium phosphide (InP) was simulated, designed, and fabricated. The layer stack for this PD was optimized for use as an optical amplifier or laser and it can be combined with the passive components. By using an SI substrate and deep etching, a small, efficient, and high-speed PD was made, which allows for easy integration of source, detector, and passive optical components on a single chip. A 3-dB bandwidth of 35 GHz and 0.25 A/W external radio-frequency reponsivity is measured at 1.55-mum wavelength for a 1.5-mum-wide and 30-mum-long waveguide PD at -4-V bias voltage. The polarization dependence in the responsivity is less than 0.27 dB.