Preparation, and magnetic and electromagnetic properties of La-doped strontium ferrite films

SrLaxFe12−xO19 films (x=0–1.0) with large magneto-crystalline anisotropy were synthesized on SiO2 substrate by sol–gel and self-propagating high-temperature synthesis technique. The films were characterized by various experimental techniques including X-ray diffraction analysis, Field Emission Scann...

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Published inJournal of magnetism and magnetic materials Vol. 323; no. 16; pp. 2224 - 2232
Main Authors Li, Y.Q., Huang, Y., Qi, S.H., Niu, F.F., Niu, L.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.08.2011
Elsevier
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Summary:SrLaxFe12−xO19 films (x=0–1.0) with large magneto-crystalline anisotropy were synthesized on SiO2 substrate by sol–gel and self-propagating high-temperature synthesis technique. The films were characterized by various experimental techniques including X-ray diffraction analysis, Field Emission Scanning Electron Microscope, Atomic Force Microscopy, Vibrating Sample Magnetometry and vector network analyzer. The results show that La ions completely enter into strontium ferrite lattice without changing the ferrite appearance; its grain size is approximately 40–80nm, its length is 100nm; the magnetoplumbite structure is proved through testing a concertina form of the crystal grain; the maximum coercivity is 5986Oe at x=0.2; La-doped films possess a wider microwave absorption frequency range with better gross loss angle tangent (tanδ>0.1), from 9 to 10.5GHz at x=0.2, where the maximum value of tanδ reaches 0.2709. The La-doped films reach smaller nanometer size, better magnetic properties and microwave absorption properties with the doping of lanthanum. ► Synthesizing the precursor of SrLaxFe12−xO19 films by sol–gel method. ► The doping of lanthanum enables excellent magnetic properties of Sr-ferrite films. ► Preparing La-doped Sr-ferrite films with nanometer scale crystal grains. ► Great interest for magnetic recording material and microwave absorbers.
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ISSN:0304-8853
DOI:10.1016/j.jmmm.2011.03.040