Characterization of obliquely deposited tungsten/silicon multilayers

• Published in: Thin solid films Vol. 238; no. 2; pp. 295 - 301
• Main Authors: Majkova, E., Luby, S., Jergel, M., Senderak, R., George, B., Vaezzadeh, M., Ghanbaja, J.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 01.02.1994; Elsevier Science
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Other nonelectronic physical properties; Physical properties of thin films, nonelectronic; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Multilayer; Roughness; Evaporation; Experimental study; Amorphous phase; Surface states; Characterization; Thickness; Reflectivity; Vapor deposition; Superconductors; Tungsten; Silicon; Incidence angle; TEM; Superconducting transition
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/0040-6090(94)90070-1

W/Si multilayers (MLs) with periods 6.6–15 nm were evaporated both perpendicularly and obliquely at incident angles 20° and 40° to the normal. MLs were deposited at 70–100 °C onto oxidized silicon. The samples were studied by TEM, CS-TEM, SAXD and resistometry in the temperature range 1.5–300 K. Experimental data were completed by simulation of the SAXD spectra. The MLs were found to be amorphous and superconducting with T c ⩽ 2.84 K. With increasing angle of deposition the thickness of the intermixed regions at the interfaces decreased and the roughness of the interfaces increased. The reflectivity of MLs was practically independent of the deposition angle, probably due to the mutual compensation of the two above-mentioned effects. The 2D–3D crossover in the weak localization and interaction behaviour observed in the temperature range T c−30 K correlates with the pure amorphous Si layer thickness reduced due to the mutual penetration of W and Si at perpendicular deposition as well as at oblique deposition for the incident angle 20°.