Direct imaging of electron recombination and transport on a semiconductor surface by femtosecond time-resolved photoemission electron microscopy

Much effort has been devoted to the development of techniques to probe carrier dynamics, which govern many semiconductor device characteristics. We report direct imaging of electron dynamics on semiconductor surfaces by time-resolved photoemission electron microscopy using femtosecond laser pulses....

Full description

Saved in:
Bibliographic Details
Published inApplied physics letters Vol. 104; no. 5
Main Authors Fukumoto, Keiki, Yamada, Yuki, Onda, Ken, Koshihara, Shin-ya
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 03.02.2014
Subjects
Applied physics
CARRIER MOBILITY
CHARGE CARRIERS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
ELECTRON MICROSCOPY
Electron recombination
ELECTRONS
Femtosecond pulses
GALLIUM ARSENIDES
LASER RADIATION
Microscopy
Photoelectric emission
PHOTOEMISSION
POTENTIALS
RECOMBINATION
SEMICONDUCTOR MATERIALS
SURFACES
TIME RESOLUTION
Online AccessGet full text

Cover

More Information
Summary:Much effort has been devoted to the development of techniques to probe carrier dynamics, which govern many semiconductor device characteristics. We report direct imaging of electron dynamics on semiconductor surfaces by time-resolved photoemission electron microscopy using femtosecond laser pulses. The experiments utilized a variable-repetition-rate femtosecond laser system to suppress sample charging problems. The recombination of photogenerated electrons and the lateral motion of the electrons driven by an external electric field on a GaAs surface were visualized. The mobility was estimated from a linear relationship between the drift velocity and the potential gradient.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4864279