Triggered high-purity telecom-wavelength single-photon generation from p-shell-driven InGaAs/GaAs quantum dot

We report on the experimental demonstration of triggered single-photon emission at the telecom O-band from In(Ga)As/GaAs quantum dots (QDs) grown by metal-organic vapor-phase epitaxy. Micro-photoluminescence excitation experiments allowed us to identify the p-shell excitonic states in agreement with...

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Published inOptics express Vol. 25; no. 25; pp. 31122 - 31129
Main Authors Dusanowski, Ł, Holewa, P, Maryński, A, Musiał, A, Heuser, T, Srocka, N, Quandt, D, Strittmatter, A, Rodt, S, Misiewicz, J, Reitzenstein, S, Sęk, G
Format Journal Article
LanguageEnglish
Published United States 11.12.2017
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Summary:We report on the experimental demonstration of triggered single-photon emission at the telecom O-band from In(Ga)As/GaAs quantum dots (QDs) grown by metal-organic vapor-phase epitaxy. Micro-photoluminescence excitation experiments allowed us to identify the p-shell excitonic states in agreement with high excitation photoluminescence on the ensemble of QDs. Hereby we drive an O-band-emitting GaAs-based QD into the p-shell states to get a triggered single photon source of high purity. Applying pulsed p-shell resonant excitation results in strong suppression of multiphoton events evidenced by the as measured value of the second-order correlation function at zero delay of 0.03 (and ~0.005 after background correction).
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ISSN:1094-4087
1094-4087
DOI:10.1364/oe.25.031122