Fabrication of Silicon on Diamond (SOD) substrates by either the Bonded and Etched-back SOI (BESOI) or the Smart-Cut™ technology

In this paper, Silicon on Diamond (SOD) substrates were fabricated using the direct bonding process in two different technologies: the BESOI (Bonded and Etched-back SOI) and the Smart-Cut™ process. The polycrystalline diamond (C∗) film deposited by Chemical Vapor Deposition assisted by Microwave Pla...

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Bibliographic Details
Published inSolid-state electronics Vol. 54; no. 2; pp. 158 - 163
Main Authors Widiez, J., Rabarot, M., Saada, S., Mazellier, J.-P., Dechamp, J., Delaye, V., Roussin, J.-C., Andrieu, F., Faynot, O., Deleonibus, S., Bergonzo, P., Clavelier, L.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.02.2010
Subjects
Bonding
Channels
Cross sections
Deposition
Etching
Silicon substrates
Sod
Surface roughness
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Summary:In this paper, Silicon on Diamond (SOD) substrates were fabricated using the direct bonding process in two different technologies: the BESOI (Bonded and Etched-back SOI) and the Smart-Cut™ process. The polycrystalline diamond (C∗) film deposited by Chemical Vapor Deposition assisted by Microwave Plasma (MPCVD) was planarized by an innovative process which induces a significant decrease of the diamond surface roughness (1.2nm for the 200nm diamond layer). The planarization method as well as the entire SOD substrate process by the BESOI or the Smart-Cut™ technology are described in the paper. Cross sectional high-resolution transmission microscopy reveals the good quality of the future silicon channel on top of the thin diamond layer.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2009.12.012