Effect of magnetostatic coupling between free and reference layers on the thermal stability of synthetic spin valves

• Published in: IEEE transactions on magnetics Vol. 36; no. 5; pp. 2863 - 2865
• Main Authors: Hae Seek Cho, Tang, M., Qing He, Xue, S.S.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: New York, NY IEEE 01.09.2000; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Capping; Couplings; Electronics; Exact sciences and technology; Ferromagnetism; Giant magnetoresistance; Joining; Magnetic anisotropy; Magnetic devices; Magnetic sensors; Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc; Magnetism; Magnetostatic waves; Microstructure; Perpendicular magnetic anisotropy; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Sensors; Spin valves; Stacks; Thermal degradation; Thermal sensors; Thermal stability; Magnetoresistive device; Magnetization curve; Magnetostatics; Magnetic coupling; Ferromagnetic materials; Giant magnetoresistance; Experimental study; Magnetoresistance; Microstructure; Magnetic device; Thermal stability
• ISSN: 0018-9464; 1941-0069
• DOI: 10.1109/20.908610

A relationship between initial ferromagnetic magnetostatic coupling strength (H/sub F/) and a long-term thermal stability of the spin valve (SSV) sensors was investigated. The thermal degradation in GMR properties of SV stacks is more apparent in the stack exhibiting a higher initial H/sub F/, and is expedited for the stacks without capping layers. Initial H/sub F/ values appear to be one of the good indicators for the long-term thermal stability of SV stacks since they reflect the inter-layer microstructure of SV sensor stacks. The origin of H/sub F/ is also discussed by comparing measured H/sub F/ values with estimated ones.