Single cuprous oxide films synthesized by radical oxidation at low temperature for PV application

Cuprous oxide (Cu(2)O) films synthesis by radical oxidation with nitrogen (N(2)) plasma treatment and different RF power at low temperature (500 °C) are studied in this paper. X-ray diffraction measurements show that synthesized Cu(2)O thin films grow on c-sapphire substrate with preferred (111) ori...

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Bibliographic Details
Published inOptics express Vol. 21; no. 9; p. 11448
Main Authors Zang, Zhigang, Nakamura, Atsushi, Temmyo, Jiro
Format Journal Article
LanguageEnglish
Published United States 06.05.2013
Subjects
Copper - chemistry
Crystallization - methods
Free Radicals
Materials Testing
Membranes, Artificial
Nanoparticles - chemistry
Oxidation-Reduction
Semiconductors
Temperature
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Summary:Cuprous oxide (Cu(2)O) films synthesis by radical oxidation with nitrogen (N(2)) plasma treatment and different RF power at low temperature (500 °C) are studied in this paper. X-ray diffraction measurements show that synthesized Cu(2)O thin films grow on c-sapphire substrate with preferred (111) orientation. With nitrogen (N(2)) plasma treatment, the optical bandgap energy is increased from 1.69 to 2.42 eV, when N(2) plasma treatment time is increased from 0 min to 40 min. Although the hole density is increased from 10(14) to 10(15) cm(-3) and the resistivity is decreased from 1879 to 780 Ω cm after N(2) plasma treatment, the performance of Cu(2)O films is poorer compared to that of Cu(2)O using RF power of 0. The fabricated ZnO/Cu(2)O solar cells based on Cu(2)O films with RF power of 0 W show a good rectifying behavior with a efficiency of 0.02%, an open-circuit voltage of 0.1 V, and a fill factor of 24%.
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ISSN:1094-4087
1094-4087
DOI:10.1364/oe.21.011448