Multilayer monolithic microwave integrated circuit directional coupler using thin dielectric layers and its applications to millimeter-wave circuits
A multilayer monolithic microwave integrated circuit (MMIC) directional coupler is proposed in which the characteristics of the multilayer MMIC structure constructed with conductors and dielectric films on a GaAs wafer surface are used effectively. In the proposed directional coupler, a tight coupli...
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Published in | Electronics & communications in Japan. Part 2, Electronics Vol. 78; no. 3; pp. 29 - 38 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
New York
Wiley Subscription Services, Inc., A Wiley Company
01.03.1995
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Subjects | |
Online Access | Get full text |
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Summary: | A multilayer monolithic microwave integrated circuit (MMIC) directional coupler is proposed in which the characteristics of the multilayer MMIC structure constructed with conductors and dielectric films on a GaAs wafer surface are used effectively. In the proposed directional coupler, a tight coupling of 3 dB can be realized with low loss and in a small area. It is highly flexible in design. Also, it is shown in this paper that by means of the proposed multilayer directional coupler, a millimeter‐wave variable attenuator, a balanced modulator, and an endless phase shifter can be realized. These structures play important roles as millimeter‐wave amplitude/phase control circuits. Hence, it is significant to accomplish miniaturization and MMIC realization.
The multilayer directional coupler designed and fabricated in the 40‐GHz band exhibited a circuit area of 0.45 mm2 and coupling losses of 4.0 ± 0.2 dB. The designed and measured values agree well. Further, the amplitude/phase control circuits were designed and also exhibited a good performance. |
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Bibliography: | istex:1CC1FDDAB7C8205E52B3AE5B5E3717980027EF3A ArticleID:ECJB4420780304 ark:/67375/WNG-V2RV9RQZ-X Akira Minakawa received his B.E. and M.S. degrees in 1984 and 1986, respectively from Ibaraki University. In 1986, he joined NTT. In 1993, he was on leave at ATR Optical and Radio Communications Research Laboratories. Since then, he has been engaged in research on monolithic microwave integrated circuits (MMICs). Presently, he is a Senior Researcher in the Radio Systems Department. received his B.E. and M.S. degrees in 1982 and 1984, respectively, from Toyohashi University of Technology. In 1984, he joined Sanyo Electric Co., Ltd. From 1990 to 1993, he was on leave at ATR Optical and Radio Communications Research Laboratories. He has mainly been engaged in research on optical/microwave integrated circuits. Presently, he is a Senior Researcher at Sanyo Electric, Microelectronics Research Center. He is a member of the Japan Society of Applied Physics and IEEE. received his B.E. degree from the Department of Electrical Engineering, Osaka Prefecture University in 1984 and joined Sanyo Electric Co., Ltd. In 1994, he was on leave at ATR Optical and Radio Communications Research Laboratories. Since then, he has been engaged in research on monolithic microwave integrated circuits (MMICs). Presently, he is with the Radio Systems Department. Seiichi Banba received his B.E. degree in 1975 from the Department of Electrical Engineering, Nagoya Institute of Technology, and bis M.S. degree from Kyoto University in 1977, the year he joined NTT. Since then, he has been engaged in research on microwave and millimeter‐wave integrated circuits and in development of digital microwave systems. In 1993, he was on leave at ATR Optical and Radio Communications Research Laboratories. He has been engaged in research on millimeter‐wave MMICs and optical fiber‐link systems. Presently, he is a Senior Researcher in the Radio Systems Department. He is a member of IEEE. Nobuaki Imai Toshikazu Imaoka |
ISSN: | 8756-663X 1520-6432 |
DOI: | 10.1002/ecjb.4420780304 |