Enhancement of defect-induced Raman modes at the fundamental absorption edge of electron-irradiated GaAs

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Bibliographic Details
Published inPhysical review. B, Condensed matter Vol. 33; no. 10; p. 7349
Main Authors Berg, RS, Yu, PY
Format Journal Article
LanguageEnglish
Published United States 15.05.1986
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ISSN:0163-1829
1095-3795
DOI:10.1103/PhysRevB.33.7349