SiC power devices packaging with a short-circuit failure mode capability

• Published in: Microelectronics and reliability Vol. 76-77; pp. 400 - 404
• Main Authors: Dchar, Ilyas, Buttay, Cyril, Morel, Hervé
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.09.2017; Elsevier
• Subjects: Engineering Sciences
• ISSN: 0026-2714; 1872-941X
• DOI: 10.1016/j.microrel.2017.07.003

The failure mode of press-pack-type packages dedicated to SiC devices is experimentally analyzed in order to investigate their use for HVDC applications. Single SiC Schottky diode samples have been submitted to short-circuit conditions and continuous current flow test. The samples have been then characterized with optical and scanning electronic microscopy. Results from the experiments reveal that the press-pack structure offers a short-circuit failure mode with SiC devices, as it does for Si devices. The metallurgy involved is, however, quite different. Cu, Ni, Ag or Al foils are found to be suitable interface material between the package and the die to achieve a stable a short-circuit failure mode, providing the die is properly attached to a substrate. •The press-pack structure offers a short-circuit failure mode with SiC devices.•Cu, Ni, Ag or Al foils are suitable interface material to achieve a stable short-circuit failure mode (SCFM).•The failure is localized in a small spot resulting in very high temperature, sufficient to create a crater in the SiC die.