A Current-Induced Channel Organic Thin-Film Transistor

• Published in: IEEE transactions on electron devices Vol. 63; no. 1; pp. 459 - 464
• Main Authors: Gangwar, A., Mazhari, B.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.01.2016; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Channels; Charge; Charge carrier processes; Current carriers; Devices; Electric dipole (ED); Electric potential; Gates; Logic gates; Organic thin film transistors; organic thin-film transistor (OTFT); Radiative recombination; Semiconductor devices; Thin film transistors; unity gain frequency; organic thin-film transistor (OTFT); unity gain frequency; Electric dipole (ED)
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2015.2499384

An organic thin-film transistor structure is proposed in which a channel is created through formation of an electric dipole layer at the semiconductor-insulator interface. The dipole is composed of mobile carriers, electrons, and holes and results from the modification of gate insulator to allow controlled amounts of gate current to flow in the ON-state. 2-D device simulations are used to show that the proposed structure offers the potential for obtaining significantly higher channel charge and current without requiring higher voltages. It is also shown that these advantages come while maintaining OFF-current and unity gain frequency comparable with conventional transistors.