Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes

The laser-induced periodic surface structure technique was used to form simultaneously dual-scale rough structures (DSRS) with spiral-shaped nanoscale structure inside semi-spherical microscale holes on p-GaN surface to improve the light-extraction efficiency of light-emitting diodes (LEDs). The lig...

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Bibliographic Details
Published inOptics express Vol. 20; no. 5; pp. 5689 - 5695
Main Authors Chen, Jiun-Ting, Lai, Wei-Chih, Kao, Yu-Jui, Yang, Ya-Yu, Sheu, Jinn-Kong
Format Journal Article
LanguageEnglish
Published United States 27.02.2012
Subjects
Energy Transfer
Equipment Design
Equipment Failure Analysis
Gallium - chemistry
Lasers
Lighting - instrumentation
Semiconductors
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Summary:The laser-induced periodic surface structure technique was used to form simultaneously dual-scale rough structures (DSRS) with spiral-shaped nanoscale structure inside semi-spherical microscale holes on p-GaN surface to improve the light-extraction efficiency of light-emitting diodes (LEDs). The light output power of DSRS-LEDs was 30% higher than that of conventional LEDs at an injection current of 20 mA. The enhancement in the light output power could be attributed to the increase in the probability of photons to escape from the increased surface area of textured p-GaN surface.
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ISSN:1094-4087
1094-4087
DOI:10.1364/oe.20.005689