Negative photoconductivity of InAs nanowires

Negative photoconductivity is observed in InAs nanowires (NWs) without a surface defective layer. The negative photoconductivity is strongly dependent on the wavelength and intensity of the light, and is also sensitive to the environmental atmosphere. Two kinds of mechanisms are discerned to work to...

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Published inPhysical chemistry chemical physics : PCCP Vol. 18; no. 2; pp. 818 - 826
Main Authors Han, Yuxiang, Zheng, Xiao, Fu, Mengqi, Pan, Dong, Li, Xing, Guo, Yao, Zhao, Jianhua, Chen, Qing
Format Journal Article
LanguageEnglish
Published England 14.01.2016
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Summary:Negative photoconductivity is observed in InAs nanowires (NWs) without a surface defective layer. The negative photoconductivity is strongly dependent on the wavelength and intensity of the light, and is also sensitive to the environmental atmosphere. Two kinds of mechanisms are discerned to work together. One is related to gas adsorption, which is photodesorption of water molecules and photo-assisted chemisorption of O2 molecules. The other one can be attributed to the photogating effect introduced by the native oxide layer outside the NWs.
Bibliography:ObjectType-Article-1
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ISSN:1463-9076
1463-9084
DOI:10.1039/c5cp06139c