Further Study of the U-Shaped Channel SOI-LIGBT With Enhanced Current Density for High-Voltage Monolithic ICs

• Published in: IEEE transactions on electron devices Vol. 63; no. 3; pp. 1161 - 1167
• Main Authors: Zhu, Jing, Zhang, Long, Sun, Weifeng, Du, Yicheng, Huang, Keqin, Chen, Meng, Shi, Longxing, Gu, Yan, Zhang, Sen
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.03.2016; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Analytical models; Channels; Current density; Devices; Electric potential; Emitters (electron); JFETs; Latch-up; latch-up voltage; Lattices; Logic gates; Mathematical analysis; Resistance; short-circuit withstand time; Silicon-on-insulator; silicon-on-insulator lateral insulated-gate bipolar transistor (SOI-LIGBT); U-shaped channel; Voltage; short-circuit withstand time; latch-up voltage; Current density; silicon-on-insulator lateral insulated-gate bipolar transistor (SOI-LIGBT); U-shaped channel
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2016.2520466

A high-voltage silicon-on-insulator lateral insulated-gate bipolar transistor (SOI-LIGBT) with U-shaped channels, which are composed of parallel channels and orthogonal channels for improving the current density (J C ) and latch-up immunity, is proposed and studied intensively in this paper. By using the U-shaped channels, the electron injection from the emitter into the n-drift region is significantly enhanced, and the current density is improved. In addition, an analytical model is proposed, and it is indicated that J C can be improved as α (the angle between the parallel channel and the orthogonal channel) increases in a certain range. The hole current density distribution in the ON-state and the lattice temperature distribution in the short-circuit state of the proposed structure are also investigated. Increasing α is beneficial to alleviate the holes crowding beneath the n + emitter and suppress the temperature rise in the JFET region, which is favorable for increasing the latch-up voltage (V LP ) and short-circuit withstand time (t SC ). The experiments demonstrate that the U-shaped channel SOI-LIGBT fabricated with 0.5-μm SOI technology exhibits a high current density (J C ) of 305 A/cm 2 at V CE = 3 V and V GE = 5 V, and a low specific ON-resistance (R ON· sp ) of 0.984 Ω · mm 2 with breakdown voltage of 590 V. The improved latch-up voltage (V LP ) of 560 V and the short-circuit withstand time (t SC ) of 5.1 μs are obtained.