Symmetrical unified compact model of short-channel double-gate MOSFETs

• Published in: Solid-state electronics Vol. 69; pp. 55 - 61
• Main Authors: Papathanasiou, K., Theodorou, C.G., Tsormpatzoglou, A., Tassis, D.H., Dimitriadis, C.A., Bucher, M., Ghibaudo, G.
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 01.03.2012; Elsevier
• Subjects: Applied sciences; Channels; Circuits; Compact model; Computer simulation; Data Analysis, Statistics and Probability; Double-gate MOSFET; Drains; Electric, optical and optoelectronic circuits; Electronics; Engineering Sciences; Exact sciences and technology; Mathematical models; Micro and nanotechnologies; Microelectronics; Modulation; MOSFETs; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Symmetrical; Theoretical study. Circuits analysis and design; Transistors; Unified; Compact model; Unified; Symmetrical; Double-gate MOSFET; MOSFET; Circuit simulation; Short channel; Transfer characteristic; Doped materials; Inversion; Dual gate transistor; Compact design; Degradation; Coding; Modulation; Drain current; DIBL effect; Damaging
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2011.10.002

[Display omitted] ► Presentation of an explicit charge-based unified compact drain current model for DG MOSFETs. ► Short-channel compatible. ► Valid and continuous in all regimes of operation. ► Suitable for circuit simulation. An explicit charge-based unified compact drain current model for lightly doped or undoped DG MOSFETs is proposed. It takes into account the short-channel effects, the subthreshold slope degradation, the drain-induced barrier lowering and the channel length modulation effects. The model is valid and continuous in all regimes of operation and it has been validated by developing a Verilog-A code and comparing the model results of transfer and output characteristics with simulation results exhibiting an average error of about 3%. The efficient solution of the Lambert W function for the inversion charge and the symmetry of the model make it suitable for circuit simulation and allow fast and accurate simulations of the transistor characteristics.