Anchor-free NEMS non-volatile memory cell for harsh environment data storage

This work demonstrates a novel anchor-free nano-electromechanical (NEMS) based non-volatile memory cell, suitable for high temperature (T ≤ 300 °C) and radiation prone harsh environment applications. The anchor-free circular metal beam is actuated by electrostatic force and is held in one of the bi-...

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Published inJournal of micromechanics and microengineering Vol. 24; no. 11; pp. 115007 - 115013
Main Authors Singh, Pushpapraj, Chua, Geng Li, Liang, Ying Shun, Jayaraman, Karthik Gopal, Do, Anh Tuan, Kim, Tony Tae-Hyoung
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.11.2014
Institute of Physics
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Summary:This work demonstrates a novel anchor-free nano-electromechanical (NEMS) based non-volatile memory cell, suitable for high temperature (T ≤ 300 °C) and radiation prone harsh environment applications. The anchor-free circular metal beam is actuated by electrostatic force and is held in one of the bi-stable memory states by adhesion force between two smooth metal surfaces in contact. Smooth metal layers form strong van der Waals stiction between two surfaces in contact and memory detection (Logic-'1' / Logic-'0') is obtained by detecting the conductance between two fixed contacts. This anchor-free design offers highest density (9F2 footprint) compared to other mechanical memory devices reported to date.
Bibliography:JMM-100809.R1
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ISSN:0960-1317
1361-6439
DOI:10.1088/0960-1317/24/11/115007