Electrical Behavior of MBE Grown Interfacial Misfit GaSb/GaAs Heterostructures With and Without Te-Doped Interfaces

• Published in: IEEE transactions on electron devices Vol. 62; no. 12; pp. 3980 - 3986
• Main Authors: Aziz, Mohsin, Felix, Jorlandio Francisco, Al Saqri, Noor, Jameel, Dler, Saleh Al Mashary, Faisal, Albalawi, Hind Mohammed, Mohammed Abdullah Alghamdi, Haifaa, Taylor, David, Henini, Mohamed
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.12.2015; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Capacitance; Capacitance-frequency (C-F); capacitance-voltage (C-V); Capacitance-voltage characteristics; current-voltage (I-V); Current-voltage characteristics; Deep level transient spectroscopy; deep level transient spectroscopy (DLTS); Defects; Degradation; Devices; Electron traps; Gallium arsenide; Gallium arsenides; Gallium compounds; Heterostructures; Interface states; capacitance–voltage ( {C} – {V} ); deep level transient spectroscopy (DLTS); Capacitance–frequency ( {C} – {F} ); current–voltage ( {I} – {V} )
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2015.2488904

A detailed study of interface states in interfacial misfit (IMF) grown GaSb on GaAs substrates is presented. Two types of structures, namely, uncompensated and Te compensated, are investigated using current-voltage, capacitance-frequency, conductance-frequency, and deep level transient spectroscopy techniques. Our studies reveal that incorporation of Te at the interface (IMF) causes a degradation of the Te-compensated devices. A higher number of electrical active defects and higher value of interface states are detected in Te-compensated IMF GaSb/GaAs devices compared with as-grown IMF GaSb/GaAs devices.