Synthesis and evaluation of TiN–WC/TiN nanocomposite by the hybrid technique with arc ion plating and magnetron sputtering
By adjusting the power of WC target, novel TiN–WC films with different proportions of WC phase were prepared on TiN interlayer using the hybrid technique of arc ion plating (AIP) and magnetron sputtering (MS). The TiN–WC films were characterized by XRD, XPS, AFM, FESEM, Nano-indenter, and UMT-2MT tr...
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Published in | Current applied physics Vol. 10; no. 3; pp. 842 - 847 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.05.2010
한국물리학회 |
Subjects | |
Online Access | Get full text |
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Summary: | By adjusting the power of WC target, novel TiN–WC films with different proportions of WC phase were prepared on TiN interlayer using the hybrid technique of arc ion plating (AIP) and magnetron sputtering (MS). The TiN–WC films were characterized by XRD, XPS, AFM, FESEM, Nano-indenter, and UMT-2MT tribometer. The TiN–WC film that is composed with TiN and WC phases was grown by 15–25
nm nanodotes along the primarily growth direction TiN (1
1
1) in AIP interlayer. Among the three TiN–WC films deposited at various powers of WC target, the TiN–WC2 (500
W) has the highest deposition rate of 1.4
nm/min. The content of WC phase increases as WC target power increases in the TiN–WC films. However, the deposition rate of TiN–WC film gains at first and then declines when WC target power exceeds 500
W because of the addictive poisoning of Ti target. In the present case, the incorporation of WC into TiN is found to result in a slight decrease in friction coefficient. Furthermore, the wear mechanism of multilayer AIP
TiN films and MS
TiN–WC/AIP
TiN films was transformed from “severe wear” to “mild wear”. As a result, the 48TiN52WC film of 35 GPa hardness exhibits better tribological performance. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 G704-001115.2010.10.3.044 |
ISSN: | 1567-1739 1878-1675 |
DOI: | 10.1016/j.cap.2009.10.005 |