Origin of the low-frequency noise in n-channel FinFETs

• Published in: Solid-state electronics Vol. 82; pp. 21 - 24
• Main Authors: Theodorou, C.G., Fasarakis, N., Hoffman, T., Chiarella, T., Ghibaudo, G., Dimitriadis, C.A.
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 01.04.2013; Elsevier
• Subjects: Applied sciences; Current carriers; Devices; Drains; Electronics; Engineering Sciences; Exact sciences and technology; FinFETs; Fluctuation; Generation–recombination noise; Low-frequency noise; Micro and nanotechnologies; Microelectronics; Noise; Origin of noise; Origins; Oxides; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Spectra; Transistors; FinFETs; Low-frequency noise; Origin of noise; Generation–recombination noise; MOSFET; Short channel; Transistor gate; n channel; Contact process; Dual gate transistor; 1/f noise; Self aligned technology; Field effect transistor; Long channel; Generation-recombination noise; Gate oxide; Generation recombination noise; Drain current
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2013.01.009

► The impact of the fin width on the low-frequency noise behavior was investigated. ► Both long (L=1μm) and short (L=25nm) channel devices were studied. ► 1/f behavior in wide (W=1um) and long fin devices, compatible with CNF+CMF noise model. ► g–r noise presence in narrow (W<65nm) and long fin devices, due to the sidewalls interfaces contribution. ► g–r noise presence in narrow and short fin devices, due to process steps for the S and D contacts formation. The origin of the low-frequency noise is investigated in n-channel fin-shaped field-effect transistors (FinFETs) in terms of the channel length and fin width. In long-channel and wide fin devices, the spectra are dominated by 1/f noise due to carrier number fluctuation, correlated with mobility fluctuations. In long-channel and narrow fin devices, the spectra are composed of both 1/f and excess generation–recombination (g–r) noise components. Analysis of the g–r noise parameters lead to the conclusion that the g–r noise originates from traps in the sidewall gate oxides and in a depletion region near the sidewall interfaces. In short-channel devices, the spectra show 1/f behavior in the weak inversion described by carrier number fluctuations and g–r noise component in the low drain current region, possibly originating from the source and drain contacts process.