The polarized carbon nanotube thin film LED

We demonstrate a light emitting p-i-n diode made of a highly aligned film of separated (99%) semiconducting carbon nanotubes, self-assembled from solution. By using a split gate technique, we create p- and n-doped regions in the nanotube film that are separated by a micron-wide gap. We inject p- and...

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Bibliographic Details
Published inOptics express Vol. 18; no. 25; pp. 25738 - 25745
Main Authors Kinoshita, Megumi, Steiner, Mathias, Engel, Michael, Small, Joshua P, Green, Alexander A, Hersam, Mark C, Krupke, Ralph, Mendez, Emilio E, Avouris, Phaedon
Format Journal Article
LanguageEnglish
Published United States 06.12.2010
Subjects
Equipment Design
Equipment Failure Analysis
Lighting - instrumentation
Nanotechnology - instrumentation
Nanotubes, Carbon - chemistry
Nanotubes, Carbon - ultrastructure
Refractometry - instrumentation
Semiconductors
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Summary:We demonstrate a light emitting p-i-n diode made of a highly aligned film of separated (99%) semiconducting carbon nanotubes, self-assembled from solution. By using a split gate technique, we create p- and n-doped regions in the nanotube film that are separated by a micron-wide gap. We inject p- and n-type charge carriers into the device channel from opposite contacts and investigate the radiative recombination using optical micro-spectroscopy. We find that the threshold-less light generation efficiency in the intrinsic carbon nanotube film segment can be enhanced by increasing the potential drop across the junction, demonstrating the LED-principle in a carbon nanotube film for the first time. The device emits infrared light that is polarized along the long axes of the carbon nanotubes that form the aligned film.
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ISSN:1094-4087
1094-4087
DOI:10.1364/oe.18.025738