A method for negative bias temperature instability (NBTI) measurements on power VDMOS transistors

• Published in: Measurement science & technology Vol. 23; no. 8; pp. 85003 - 1-8
• Main Authors: Priji, A, Dankovi, D, Vra ar, Lj, Mani, I, Priji, Z, Stojadinovi, N
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.08.2012
• Subjects: Circuits; Devices; Electric potential; Instability; negative bias temperature instability measurements; Niobium base alloys; Semiconductor devices; threshold voltage shift; Transistors; VDMOS transistor; Voltage

A method suitable for performing NBTI measurements on power p-channel VDMOS transistors is described. A practical implementation using simple boosting circuit for obtaining required gate stress voltage and sweep I-V measurements for the threshold voltage shift determination is presented. Experimenta...