An Analytical Surface Potential Model Accounting for the Dual-Modulation Effects in Tunnel FETs

• Published in: IEEE transactions on electron devices Vol. 61; no. 8; pp. 2690 - 2696
• Main Authors: Wu, Chunlei, Huang, Ru, Huang, Qianqian, Wang, Chao, Wang, Jiaxin, Wang, Yangyuan
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.08.2014; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Analytical model; Analytical models; Approximation methods; Bias; Channels; Computer simulation; dual-modulation effects; Electric potential; Gates (circuits); IEEE Potentials; Junctions; Logic gates; Mathematical analysis; Mathematical models; Predictive models; surface potential; tunnel field-effect transistor; Tunnels (transportation); Analytical model; surface potential; dual-modulation effects; tunnel field-effect transistor
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2014.2329372

In this paper, an analytical model of the channel surface potential in the tunnel field effect transistors (TFETs) is established and verified. The dual-modulation effects in TFETs that the surface potential of the channel is alternatively controlled by the gate bias and drain bias in different operating regimes are emphasized and studied. The transition point corresponding to the switching between the two operating regimes is also analyzed quantitatively. For the first time, a closed-form analytical model of the surface potential in TFETs, including the impacts of both the gate voltage and drain voltage is proposed. Furthermore, a compact current model of the TFET-based on the derived surface potential expression is given. The model predicted tunneling current agree well with the TCAD simulation results in all operating regions of TFETs, which will be helpful for the circuit properties simulation of the TFET.