Bound exciton photoluminescence from ion‑implanted phosphorus in thin silicon layers

We report the observation of clear bound exciton (BE) emission from ion-implanted phosphorus. Shallow implantation and high-temperature annealing successfully introduce active donors into thin silicon layers. The BE emission at a wavelength of 1079 nm shows that a part of the implanted donors are de...

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Bibliographic Details
Published inOptics express Vol. 19; no. 25; pp. 25255 - 25262
Main Authors Sumikura, Hisashi, Nishiguchi, Katsuhiko, Ono, Yukinori, Fujiwara, Akira, Notomi, Masaya
Format Journal Article
LanguageEnglish
Published United States 05.12.2011
Subjects
Equipment Design
Equipment Failure Analysis
Heavy Ions
Light
Luminescent Measurements - instrumentation
Materials Testing
Phosphorus - chemistry
Phosphorus - radiation effects
Scattering, Radiation
Silicon - chemistry
Silicon - radiation effects
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Summary:We report the observation of clear bound exciton (BE) emission from ion-implanted phosphorus. Shallow implantation and high-temperature annealing successfully introduce active donors into thin silicon layers. The BE emission at a wavelength of 1079 nm shows that a part of the implanted donors are definitely activated and isolated from each other. However, photoluminescence and electron spin resonance studies find a cluster state of the activated donors. The BE emission is suppressed by this cluster state rather than the nonradiative processes caused by ion implantation. Our results provide important information about ion implantation for doping quantum devices with phosphorus quantum bits.
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ISSN:1094-4087
1094-4087
DOI:10.1364/oe.19.025255