Comparative study of ZnO thin films prepared by plasma deposition and electron beam evaporation for use in photovoltaic devices

• Published in: Progress in photovoltaics Vol. 19; no. 2; pp. 149 - 154
• Main Authors: Falcão, V. D., Miranda, D. O., Sabino, M. E. L., Moura, T. D. O., Diniz, A. S. A. C, Cruz, L. R., Branco, J. R. T.
• Format: Journal Article
• Language: English
• Published: Chichester, UK John Wiley & Sons, Ltd 01.03.2011; Wiley
• Subjects: Applied sciences; Deposition; Direct energy conversion and energy accumulation; Electrical engineering. Electrical power engineering; Electrical power engineering; Electron beams; Energy; Evaporation; Exact sciences and technology; Natural energy; Photoelectric conversion; Photovoltaic cells; Photovoltaic conversion; photovoltaic devices; Plasma deposition; Solar cells; Solar cells. Photoelectrochemical cells; Solar energy; Thin films; transparent conductive oxide; Zinc oxide; Conducting material; transparent conductive oxide; photovoltaic devices; Zinc oxide; Cathodic sputtering; Transparent material; Plasma deposition; Comparative study; Electron beam evaporation; Thin film; Photovoltaic cell
• ISSN: 1062-7995; 1099-159X; 1099-159X
• DOI: 10.1002/pip.999

Undoped zinc oxide thin films were grown at room temperature using two techniques: plasma deposition (PD) and electron beam evaporation in an argon atmosphere. PD offers some advantages, such as low ion damage and low deposition temperature. The optical transmittance of the films deposited by both methods was higher than 80% in the near UV–VIS range; the energy band gap and index of refraction agree with values reported in the literature. The resistivity of films grown by PD was 3.1 × 10−2 Ω cm, lower than the value of 1.2 × 10−1 Ω cm found for plasma assisted e‐beam evaporated films. Copyright © 2010 John Wiley & Sons, Ltd. Undoped ZnO thin films were grown at room temperature using two techniques: plasma deposition and electron beam evaporation in an argon atmosphere. The optical transmittance of the films deposited by both methods was higher than 80% in the near UV‐VIS range; the energy band gap and index of refraction agree with values reported in the literature. The resistivity of films grown by plasma deposition was 3.1 × 10−2Ω.cm, lower than the value of 1.2 × 10−1Ω.cm found for plasma assisted e‐beam evaporated films.