A new scaling theory for fully-depleted SOI double-gate MOSFET’s: including effective conducting path effect (ECPE)

• Published in: Solid-state electronics Vol. 49; no. 3; pp. 317 - 322
• Main Author: Chiang, T.K.
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 01.03.2005; Elsevier Science
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Silicon on insulator technology; MOSFET; Dual gate transistor; Miniaturization; Depletion layer; Doping
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2004.10.008

A new scaling theory for fully-depleted double-gate (DG) SOI MOSFET’s is established, which gives a guidance for the device design so that maintaining a precise subthreshold factor for given device parameters. By investigating the subthreshold conducting phenomenon of DG MOSFET’s, the effective conducting path effect (ECPE) is employed to obtain the natural length λ 3 to guide the design. With ECPE, the minimum channel potential Φ d eff,min shows the new scaling factor α 3 to model the subthreshold behavior. Compared to conventional scaling rule, our model accounting for ECPE caused by substrate doping density not only provides a unified scaling rule but also offers the basic designing guidance for fully-depleted DG SOI MOSFET’s.